Silicon Substrate Manufacturing
Understanding the crystallography of your substrate is vital for device performance. Our inventory includes wafers grown via the Czochralski method for general electronics and Float Zone (FZ) for high-efficiency power devices.
The Czochralski (CZ) process pulls a single-crystal ingot from molten silicon, allowing for precise control over dopants (Boron, Phosphorus) to set the resistivity required for your application.
Prime Grade Silicon
Highest purity for IC fabrication. Available in <100> and <111> orientations with TTV <5µm.
SOI (Silicon on Insulator)
Engineered wafers with a buried oxide layer to reduce parasitic capacitance and improve performance in RF and MEMS.
Ultra-Thin Wafers
We provide back-grinding services to thin wafers down to 5µm-10µm for flexible electronics and TSV packaging.
Semiconductor Processing Tools
We don't just supply the raw material; we understand the tools required to transform a blank wafer into a functional device.
Photolithography
The most critical step in the fabrication process is defining the circuit pattern. This involves coating the wafer with light-sensitive photoresist and exposing it to UV light through a photomask.
Our wafers are inspected for flatness (TTV) and warp to ensure they remain within the focal depth of modern lithography steppers and scanners.
Current Inventory Specials
Immediate availability on the following overstock items:
300mm Wafers
- Undoped <100>, MEMC Prime Grade
- <20 Resistivity, 675µm thick, DSP
150mm (6-inch) Wafers
- 1383: Undoped <100>, >10k ohm-cm, 650µm DSP
- 1972: N/P <100>, 2-8k ohm-cm, 320µm SSP
- 2226: N/P <100>, 48-56 ohm-cm, 508µm SSP
Small Diameters (2" - 3")
- 542: 76.2mm P/B <111> 0.001 ohm-cm SSP
- 1445: 50.8mm N/P <100> 5-10 ohm-cm SSP
- 2260: 50.8mm Intrinsic >8500 ohm-cm SSP